Low power consumption and miniaturization of power-supply systems, such as EV on-board chargers and photovoltaic power systems. Mitsubishi Electric Corporation (TOKYO: 6503) announced today the launch of its N-series 1200V SiC-MOSFET (silicon-carbide metal-oxide-semiconductor field-effect transistor) featuring low power loss and high tolerance to self-turn-on.
The new series will help to reduce the power consumption and miniaturize power supply systems requiring high-voltage conversion, such as electric vehicle (EV) on-board chargers, photovoltaic power systems and more. Sample shipments will start this July.
Mitsubishi Electric will exhibit its new N-series 1200V SiC-MOSFET at major trade shows, including PCIM Asia 2020 in Shanghai, China from November 16 to 18.
(Source: Energy Trend)